Published by John Wiley & Sons, Inc., Hoboken, New Jersey.
Published simultaneously in Canada.

No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, scanning, or otherwise, except as permitted under Section 107 or 108 of the 1976 United States Copyright Act, without either the prior written permission of the Publisher, or authorization through payment of the appropriate per-copy fee to the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, (978) 750-8400, fax (978) 750-4470, or on the web at www.copyright.com. Requests to the Publisher for permission should be addressed to the Permissions Department, John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, (201) 748-6011, fax (201) 748-6008, or online at http://www.wiley.com/go/permission.

Limit of Liability/Disclaimer of Warranty: While the publisher and author have used their best efforts in preparing this book, they make no representations or warranties with respect to the accuracy or completeness of the contents of this book and specifically disclaim any implied warranties of merchantability or fitness for a particular purpose. No warranty may be created or extended by sales representatives or written sales materials. The advice and strategies contained herein may not be suitable for your situation. You should consult with a professional where appropriate. Neither the publisher nor author shall be liable for any loss of profit or any other commercial damages, including but not limited to special, incidental, consequential, or other damages.

For general information on our other products and services or for technical support, please contact our Customer Care Department within the United States at (800) 762-2974, outside the United States at (317) 572-3993 or fax (317) 572-4002.

Wiley also publishes its books in a variety of electronic formats. Some content that appears in print may not be available in electronic formats. For more information about Wiley products, visit our web site at www.wiley.com.

Library of Congress Cataloging-in-Publication Data is available.

ISBN: 978-1-119-21149-5
ISSN: 0196-6219

Contents

PREFACE

INTRODUCTION

SOLID OXIDE FUEL CELLS

EFFECTS OF TiO₂ ADDITION ON MICROSTRUCTURE AND IONIC CONDUCTIVITY OF GADOLINIA-DOPED CERIA SOLID ELECTROLYTE
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. SUMMARY
6. ACKNOWLEDGEMENTS
7. REFERENCES
EFFECT OF SPECIFIC SURFACE AREA AND PARTICLE SIZE DISTRIBUTION ON THE DENSIFICATION OF GADOLINIUM DOPED CERIA
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. SLURRY PREPARATION BY MILLING AND SONICATION
6. SLURRY PREPARATION BY SONICATION AND CENTRIFUGATION
7. SLURRY PREPARATION BY MILLING, SONICATION AND CENTRIFUGATION
8. CONCLUSION
9. REFERENCES
STUDY ON SINTERING AND STABILITY ISSUES OF BaZr_0.1Ce_0.7Y_0.1 Yb0.1O3_δ ELECTROLYTE FOR SOFCs
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL PROCEDURE
4. RESULTS AND DISCUSSION
5. CONCLUSIONS
6. ACKNOWLEDGEMENT
7. REFERENCES
SINTERING, MECHANICAL, ELECTRICAL AND OXIDATION PROPERTIES OF CERAMIC INTERMETALLIC TiC-Ti₃Al COMPOSITES FROM NANO-TiC PARTICLES
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. CONCLUSION
6. ACKNOWLEDGEMENT
7. REFERENCE
CHARACTERISTICS OF PROTECTIVE LSM COATINGS ON Cr-CONTAINED STEELS USED AS METALLIC INTERCONNECTORS OF INTERMEDIATED TEMPERATURE SOLID OXIDE FUEL CELLS
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. CONCLUSION
6. REFERENCES
ELECTRICAL AND MICROSTRUCTURAL EVOLUTIONS OF La_0.67Sr_0.33MnO₃ COATED FERRITIC STAINLESS STEELS AFTER LONG-TERM AGING AT 800°C
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. CONCLUSIONS
6. ACKNOWLEDGMENT
7. REFERENCES
STRUCTURAL AND ELECTROC HEMICAL PERFORMANCE STABILITY OF PEROVSKITE-FLUORITE COMPOSI TE FOR HIGH TEMPERATURE ELECTROCHEMICAL DEVICES
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL PROCEDURE
4. RESULTS AND DISCUSSION
5. CONCLUSIONS
6. ACKNOWLEDGEMENTS
7. REFERENCES
DURABILITY OF LANTHANUM STRONTIUM COBALTFERRITE ((La_0.60Sr_0.40)_0.95(Co_0.20Fe_0.80)O_3-x) CATHODES IN CO₂ AND H₂O CONTAININGAIR
1. ABSTRACT
2. INTRODUCTION
3. 1. EXPERIMENTAL
4. 3. CONCLUSIONS
5. ACKNOWLEDGEMENTS
6. REFERENCES
FABRICATION OF THE ANODE-SUPPORTED SOLID OXIDE FUEL CELL WITH COMPOSITE CATHODES AND THE PERFORMANCE EVALUATION UPON LONG-TERM OPERATION
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISSCUSION
5. CONCLUSION
6. REFERENCES
DEVELOPMENT OF MICROTUBULAR SOLID OXIDE FUEL CELLS USING HYDROCARBON FUELS
1. ABSTRACT
2. INTRODUCTION
3. Ni-YSZ and Ni-ScSZ ANODES FOR DIRECT METHANE UTILIZATION
4. Ni-ZIRCONIA and Ni-CERIA ANODES FOR DIRECT BUTANE UTILIZATION
5. DEMONSTRATION OF A PROTOTYPE PORTABLE SOFC SYSTEM
6. CONCLUSION
7. ACKNOWLEDGEMENT
8. REFERENCES
HIGHLY EFFICIENT SOLID OXIDE ELECTROLYZER AND SABATIER SYSTEM
1. ABSTRACT
2. BACKGROUND
3. OBJECTIVES
4. EXPERIMENTAL
5. RESULTS
6. FUTURE WORK
7. CONCLUSION
8. ACKNOWLEDGEMENTS
9. REFERENCES

SINGLE CRYSTALLINE MATERIALS FOR ELECTRICAL AND OPTICAL APPLICATIONS

THE EFFECTS OF EXCESS SILICON AND CARBON IN SiC SOURCE MATERIALS ON SiC SINGLE CRYSTAL GROWTH IN PHYSICAL VAPOUR TRANSPORT METHOD
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL PROCEDURE
4. RESULTS AND DISCUSSION
5. CONCLUSIONS
6. ACKNOWLEDGEMENTS
7. REFERENCES
RECENT PROGRESS OF GaN SUBSTRATES MANUFACTURED BY VAS METHOD
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. SUMMARY
6. REFERENCES
COILABLE SINGLE CRYSTAL FIBERS OF DOPED-YAG FOR HIGH POWER APPLICATIONS
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL
4. RESULTS AND DISCUSSION
5. CONCLUSION
6. ACKNOWLEDGEMENTS
7. REFERENCES
HYDROTHERMAL CRYSTAL GROWTH AND APPLICATIONS
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL PROCEDURE
4. RESULTS AND DISCUSSION
5. CONCLUSION
6. REFERENCES
REACTIVE ATMOSPHERES FOR OXIDE CRYSTAL GROWTH
1. ABSTRACT
2. INTRODUCTION
3. THEORETICAL BACKGROUND & AND THE Fe - O SYSTEM
4. THE Fe - Si - O SYSTEM AND OLIVINE
5. The VANADIUM - MOLYBDENUM - OXYGEN SYSTEM
6. CONCLUSIONS
7. REFERENCES
DISCUSSION ON POLYCRYSTALS OVER SINGLE CRYSTALS FOR OPTICAL DEVICES
1. ABSTRACT
2. INTRODUCTION
3. EXPERIMENTAL PROCEDURE
4. RESULTS AND DISCUSSIONS
5. CONCLUSION
6. REFERENCES
TERAHERTZ TIME-DOMAIN SPECTROSCOPY APPLICATION TO NON-DESTRUCTIVE QUALITY EVALUATION OF INDUSTRIAL CRYSTALLINE MATERIALS
1. ABSTRACT
2. INTRODUCTION
3. SPECTROMETRIC PERFORMANCES
4. NON-DESTRUCTIVE QUALITY EVALUATION
5. SUMMARY
6. ACKNOWLEDGEMENTS
7. REFERENCES

AUTHOR INDEX

EULA

List of Tables

EFFECTS OF TiO₂ ADDITION ON MICROSTRUCTURE AND IONIC CONDUCTIVITY OF GADOLINIA-DOPED CERIA SOLID ELECTROLYTE

Table 1. Values of relative density and apparent porosity of sintered specimens.
Table 2. Values of activation energy for grain (E_g) and grain boundary (E_gb) conduction.

EFFECT OF SPECIFIC SURFACE AREA AND PARTICLE SIZE DISTRIBUTION ON THE DENSIFICATION OF GADOLINIUM DOPED CERIA

Table 1. S_BET values, BET prime particle size and aggregate size according to the supplier

SINTERING, MECHANICAL, ELECTRICAL AND OXIDATION PROPERTIES OF CERAMIC INTERMETALLIC TiC-Ti₃Al COMPOSITES FROM NANO-TiC PARTICLES

Table 1 Lattice parameter of TiC from different samples

CHARACTERISTICS OF PROTECTIVE LSM COATINGS ON Cr-CONTAINED STEELS USED AS METALLIC INTERCONNECTORS OF INTERMEDIATED TEMPERATURE SOLID OXIDE FUEL CELLS

Table I. Parabolic constants of LSM-coated specimens and bare subsrates of Crofer 22 H and APU at 800°C.
Table II. Long-term ASR results of all specimens with elapsed time of 4,932 hours.

ELECTRICAL AND MICROSTRUCTURAL EVOLUTIONS OF La_0.67Sr_0.33MnO₃ COATED FERRITIC STAINLESS STEELS AFTER LONG-TERM AGING AT 800°C

Table 1. Compos itions of ferritic stainless steels C1, Z1, Z2, and I1. (in wt.%)

STRUCTURAL AND ELECTROC HEMICAL PERFORMANCE STABILITY OF PEROVSKITE-FLUORITE COMPOSI TE FOR HIGH TEMPERATURE ELECTROCHEMICAL DEVICES

Table 1. STEM-EDS analysis of LSCM+8YSZ sintered in Ar-3%H₂-3%H₂O.

FABRICATION OF THE ANODE-SUPPORTED SOLID OXIDE FUEL CELL WITH COMPOSITE CATHODES AND THE PERFORMANCE EVALUATION UPON LONG-TERM OPERATION

Table I. Summary of the cell structure and layer thickness for the cells investigated.

HIGHLY EFFICIENT SOLID OXIDE ELECTROLYZER AND SABATIER SYSTEM

Table 1: Pressure Testing Data

RECENT PROGRESS OF GaN SUBSTRATES MANUFACTURED BY VAS METHOD

Table I. Properties of resulting GaN substrate having a 100-mm diameter.

COILABLE SINGLE CRYSTAL FIBERS OF DOPED-YAG FOR HIGH POWER APPLICATIONS

Table I. Properties of Amorphous Silica Fibers and Single - Crystal YAG Fibers (T_g = glass softening temperature; T_m = melting temperature).
Table II. Yb:YAG fiber scattering results

DISCUSSION ON POLYCRYSTALS OVER SINGLE CRYSTALS FOR OPTICAL DEVICES

Table I. Various sintering conditions employed in present study

List of Illustrations

EFFECTS OF TiO₂ ADDITION ON MICROSTRUCTURE AND IONIC CONDUCTIVITY OF GADOLINIA-DOPED CERIA SOLID ELECTROLYTE

Figure 1. Raman spectra of sintered specimens containing TiO₂.
Figure 2. (a) scanning electron microscopy micrograph and (b) impedance spectroscopy diagram of gadolinia-doped ceria. In (b) numbers stand for the logarithm of the frequency (Hz). Temperature of measurement = 310°C.
Figure 3. Scanning electron microscopy micrographs of gadolinia-doped ceria with (a) 1, (b) 2.5 and (c) 5 mol% TiO₂, and (d) impedance spectroscopy diagrams measured at 310°C.
Figure 4. Arrhenius plots of the grain and grain boundary conductivity in gadolinia-doped ceria.
Figure 5. Arrhenius plots of the (a) grain and (b) grain boundary conductivity of TiO₂ containing gadolinia-doped ceria specimens.

EFFECT OF SPECIFIC SURFACE AREA AND PARTICLE SIZE DISTRIBUTION ON THE DENSIFICATION OF GADOLINIUM DOPED CERIA

Figure 1. PSD of GDC powder for diverse S_BET values when prepared by sonication only
Figure 2. Profile micrographs of GDC layers from GDC powders with diverse S_BET values: a) 60 m²/g, b) 40 m²/g and c) 10 m²/g when prepared by sonication only; sintering in air for 30 min at 1400°C
Figure 3. PSD of GDC powder for diverse S_BET values when prepared by milling and sonication
Figure 4. Micrographs of GDC layers from GDC powders with diverse S_Bet values: a) & c) 40 m²/g, b) & d) 60 m²/g when prepared by milling and sonication; sintering in air for 30 min at 1400°C
Figure 5. PSD of GDC powder for diverse S_BET values when prepared by sonication and centrifugation
Figure 6. Micrographs of GDC layers from GDC powders with diverse S_BET values: a) & c) 40 m²/g, b) & d) 10 m²/g when prepared by sonication and centrifugation; sintering in air for 30 min at 1400°C
Figure 7. PSD of GDC powder for diverse S_BET values when prepared by milling, sonication and centrifugation
Figure 8. Micrographs of GDC layers from GDC powders with diverse S_BET values: a) & c) 10 m²/g, b) & d) 60 m²/g when prepared by milling, sonication and centrifugation; sintering in air for 30 min at 1400°C

STUDY ON SINTERING AND STABILITY ISSUES OF BaZr_0.1Ce_0.7Y_0.1 Yb0.1O3_δ ELECTROLYTE FOR SOFCs

Figure 1. XRD Pattern of the BZCYYb disks (a) before sintering, (b) after “unprotected” sintering at 1450°C for 10 h, (c) after “unprotected” sintering at 1550°C for 10 h, and (d) after “protected” sintering at 1550°C for 10 h. The disks sintered directly in contact with alumina (“unprotected” condition) showed doped ceria phase and perovskite structure was not observed anymore.
Figure 2. XRD pattern of the alumina crucible directly in contact with BZCYYb disk after sintering at 1550°C for 10 h. Formation of BaAl₂O₄ phase (JCPDS card 00-017-0306) confirmed BaO-Al₂O₃ reaction.
Figure 3. Weight loss of the BZCYYb disks sintered under “unprotected” and “protected” conditions after 10 h of sintering at 1400°C, 1450°C, 1500°C, 1550°C, and 1600°C.
Figure 4. TGA-DSC analysis of pure BZCYYb powder heated up to 1500°C in air on platinum crucible with heating rate of 1 0°C/ min.
Figure 5. Relative density of the BZCYYb disks sintered at 1400°C, 1450°C, 1500°C, 1550°C, and 1600°C for 10 h under protected conditions.
Figure 6. SEM micrographs of BZCYYb disks sintered for 10 h under (a) “unprotected” condition (directly on alumina crucible) at 1450°C, (b) “unprotected” condition at 1550°C, (c) “protected” condition (with protective BZCYYb covering on both sides) at 1450°C, and (d) “protected” condition at 1550°C.
Figure 7. XRD patterns of BZCYYb disks (sintered under “protected” conditions at 1550°C for 10 h) after exposure to pure CO₂ and 100 ppm H₂S/H₂ atmospheres at 450°C for 24 h. Under both atmospheres BZCYYb perovskite phase was observed.
Figure 8. XRD patterns of BZCYYb disks (sintered under “protected” conditions at 1550°C for 10 h) after exposure to pure CO₂ and 100 ppm H₂S/ H₂ atmospheres at 750°C for 24 h.

SINTERING, MECHANICAL, ELECTRICAL AND OXIDATION PROPERTIES OF CERAMIC INTERMETALLIC TiC-Ti₃Al COMPOSITES FROM NANO-TiC PARTICLES

Figure 1. TEM micrograph with diffraction patterns revealing TiC and XRD patterns of produced nano-sized TiC. (a) TEM micrograph and diffraction patterns, (b) XRD pattern.
Figure 2. XRD patterns of samples with 20 wt.% Ti₃Al sintering at different temperature. (a) 1300°C; (b) 1400°C; (c) 1500°C
Figure 3. XRD patterns of samples sintering at 1500°C with different Ti₃Al weight percent. (a) 10 wt.%; (b) 20 wt.%; (c) 30 wt.%; (d) 40 wt.%
Figure 4. Sintered density and percent of theoretical density as a function of sintering temperature for 20 wt. % Ti₃Al with 80 wt. % TiC (a) sintered densi ty, (b) percent of theoretical density.
Figure 5. Sintered density and percent of theoretical density as a function of Ti₃Al content (a) sintered density, (b) percent of theoretical density.
Figure 6. Microstruc ture of TiC with 20 wt. % Ti₃Al sintering under different temperature. (a)1300°C, (b)1400°C, (c)1500°C
Figure 7. Elements map of samples sintering at 1400°C. (a) Aluminum, (b) Titanium
Figure 8. Microstructures with aluminum element mapping of samples sintering at 1500°C with different Ti₃Al content. (a)10 wt. % Ti₃Al, (b)20 wt. % Ti₃Al, (c)30 wt. % Ti₃Al, (d)40 wt. %Ti₃Al.
Figure 9. The Vickers hardness and fracture toughness as a function of Ti₃Al content Electrical conductivities and oxidization properties
Figure 10. Electrical conductivi ties of TiC-Ti₃Al samples as a function of time at 800°C in air
Figure 11. Weight gain per unit area of before and after measurement
Figure 12. Microstructures of polished cross section tested samples with different Ti₃Al content. (a)10 wt. % Ti₃Al, (b)20 wt. % Ti₃Al, (c)30 wt. % Ti₃Al, (d)40 wt. % Ti₃Al.
Figure 1. (a) Schematic diagram of the APS system. (b) Re-granulated LSM powders.

CHARACTERISTICS OF PROTECTIVE LSM COATINGS ON Cr-CONTAINED STEELS USED AS METALLIC INTERCONNECTORS OF INTERMEDIATED TEMPERATURE SOLID OXIDE FUEL CELLS

Figure 2. Schemati c diagram of the Darcy permeabili ty testing e quipment.¹¹
Figure 3. The XRD results of (a) as-spraye d LSM coating on differe nt substrates; (b) LSM coated specimens after the heat treatment of 800°C for 600 hrs.
Figure 4. Weight gain as a function of time during oxidation treatment of the LSM-coated Crofer 22 H and Crofer 22 APU in air at 800°C, compared with that of bare Crofer 22 H and Corfer 22 APU.
Figure 5. (a) Surface morphology and (b) cross-sectional observation of the as-sprayed LSM coating on a Crofer 22 H substrate without the pre-oxidation treatment (c) EDS re sults obtai ned from the red square area in (b).
Figure 6. Micrographs in (a) low and (b) high magnifications of the sprayed LSM coating on a Crofer 22 H substrate without pre-oxidation treatment and after the heat treatment at 800°C for 600 hrs.
Figure 7. Arrhenius plots of LSM-coated Crofer 22 H, Crofer 22 APU and SS441 specimens with or without pre-oxidation treatment
Figure 8. Long-term ASR measurement results of LSM-coated Crofer 22 H, Crofer 22 APU and SS441 specimens (a) without pre-oxidation treatment, and (b) with pre-oxidation treatment.

ELECTRICAL AND MICROSTRUCTURAL EVOLUTIONS OF La_0.67Sr_0.33MnO₃ COATED FERRITIC STAINLESS STEELS AFTER LONG-TERM AGING AT 800°C

Figure 1. The appearance (a) and (b) schematic diagram of pulsed DC magnetron sputtering system.
Figure 2. Surface morphologies of LSM-coated (a)C1, (b)Z1, (c)Z2, and (d)I1 substrates after aging at 800°C for 10,103 hours in an air atmosphere.
Figure 3. Cross-sectional micrographs and elemental concentration profiles of LSM-coated (a)C1, (b)Z1, (c)Z2, and (d)I1 steel substrates after aging at 800°C for 10,103 hours in an air atmosphere. (EDS scans marked as yellow dot lines)
Figure 4. XRD patterns of LSM-coated (a)C1, (b)Z1, (c)Z2, and (d)I1 steel substrates after aging at 800°C for 10,103 hours in an air atmosphere.
Figure 5. Area specific resistance (ASR) values of LSM-coated (a)C1, (b)Z1, (c)Z2, and (d)I1 steel substrates aging at 800°C for 10, 103 hours in an airatmos phere.
Figure 6. Surface morphologies of LSM-coated Z2 specimens after (a)calcination at 850°C for 4 hours, and (b)aging at 800°C for 500 hours in an air atmosphere.

STRUCTURAL AND ELECTROC HEMICAL PERFORMANCE STABILITY OF PEROVSKITE-FLUORITE COMPOSI TE FOR HIGH TEMPERATURE ELECTROCHEMICAL DEVICES

Figure 1. XRD pattern of LSCM+8YSZ composite sintered in air and Ar-3%H₂-3%H₂O at 1400°C for 10h.
Figure 2. SEM micrographs of LSCM and 8YSZ composite sintered at 1400°C for 10h: a) in air, and b) in Ar-3%H₂-3%H₂O.
Figure 3. TEM micrograph (with the FIB cross-section) of LSCM and 8YSZ composite sintered at 1400°C for 10h in Ar-3%H₂-3%H₂O.
Figure 4. Ohmic and non-ohmic resistance of symmetrical cell of configuration LSCM73+8YSZ//8YSZ//LSCNM73+8YSZ as a function of time (0-80 h) in air and Ar-3%H₂-3%H₂O under the bias of 0.5 V.
Figure 5. SEM micrographs of the symmetrical cell of configuration LSCM73+8YSZ//8YS Z//LSCM73+8YSZ (anode surface): a) as -sintered in air, b) tested in air, and c) tested in Ar-3%H₂-3%H₂O.

DURABILITY OF LANTHANUM STRONTIUM COBALTFERRITE ((La_0.60Sr_0.40)_0.95(Co_0.20Fe_0.80)O_3-x) CATHODES IN CO₂ AND H₂O CONTAININGAIR

Fig. 1. SEM images of post-test LSCF cathodes after 100 hour tests at 750°C i n di fferent cathode gas environment. A: in dry air, B: in 3% H₂O, C: in 3% CO₂-air, D: in 3% CO₂-3% H₂O-air
Fig. 2. It curves of LSCF/GDC/LSCF symmetrical cells tested at 750°C in different cathode gas environment.
Fig. 3. Nyquist spectra of the LSCF/GDC/LSCF symmetrical cells exposed in different cathode gas environment. A: dry air, B: 3% H₂O-air, C: 3% CO₂ - air, D: 3% CO₂-3 % H₂O-air. The electrochemical impedance spectra has been measured at 0.5 V (vs reference) in the frequency range of 100 mHz to 200 KHz with a sinus amplitude of 10mV.

FABRICATION OF THE ANODE-SUPPORTED SOLID OXIDE FUEL CELL WITH COMPOSITE CATHODES AND THE PERFORMANCE EVALUATION UPON LONG-TERM OPERATION

Figure 1. The scheme of the detai led structure of the cell test housing.
Figure 2. SEM cross-sec tion micrograph of the FC1.
Figure 3. The linear scanning of elemental distributions of the FC1 by the EDX method.
Figure 4. The plots of cell potential, temperature, current density, and power density vs. time for the FC1.
Figure 5. (a) Nyquist impedance plots for the FC1 under diffe rent operati on time. (b) The relationship of the resistance vs. operation time.
Figure 6. The original Nyquist impedance plots for the FC1 at (a). different ope ration temperatures and, (b). the relationship of the resistance s vs. the operation temperature.
Figure 7. The relationships of the resistances versus temperature and the Arrhenius plots for the FC1.
Figure 8. Cell voltage and power density as a function of current density for the FC1 at different temperatures
Figure 9. The comparison of electrochemical performance between FC1 and H.C. Starck cell. (a) The relationships of voltage and power density versus time. (b) Voltage-Current-Power (V-I-P) curves.

DEVELOPMENT OF MICROTUBULAR SOLID OXIDE FUEL CELLS USING HYDROCARBON FUELS

Figure 1. Time courses of output voltage and anode overpotential at 1.0 A/cm² for the planar cells with Ni-YSZ and Ni-ScSZ anodes in 3 %H₂O- 97 %CH₄ at 1000°C.
Figure 2. Scanning electron microscope images of (a) Ni-YSZ and (b) Ni-ScSZ after exposure in dry CH₄ for 5 min at 1000°C.
Figure 3. Time courses of weight ratio of deposited carbon to catalyst with a supply of dry CH₄ on Ni-YSZ and Ni-ScSZ at 850 and 1000°C.
Figure 4. Raman spectra for Ni-YSZ and Ni-ScSZ after exposure to dry 10 %CH₄–N₂ for 1 h at 800 and 1000°C. The spectra are normalized to the intensity of G band at 1580 cm⁻¹ (I_G).
Figure 5. Lattice parameters of Ni-doped (a) YSZ and (b) ScSZ after calcination at 1400°C in air and at 800°C in 10 %H₂-N₂.
Figure 6. Secondary electron microscope images of Ni particles on YSZ and ScSZ disks after reduction, oxidation and re- reduction treatments.
Figure 7. Secondary electron and backscattered electron microscope images for nickel particles on ScSZ disk after exposure to 1 0 % CH₄-N₂ mixture for 10 and 60 min. The black areas in the backscattered electron images were ascribed to deposited carbon.
Figure 8. CO₂ production under temperature programmed oxidation (TPO) in 5 %O₂-Heat a heating rate of 10°C/min for Ni-YSZ (solid line) and Ni-ScSZ (dotted line) cermets after exposure to 10 %CH₄-N₂ for 1 h at 800 and 1000°C. The spectrum for Ni-ScSZ cermet exposed at 1000°C is separated into three curves (Cα Cβ and Cγ).
Figure 9. Raman spectra for Ni-YSZ anode in an electrolyte-supported planar SOFC. Before discharge, the anode was exposed to 10 %CH₄– N₂ mixture without current loading for 1 h at 1000°C. The discharge condition was at 0.3 A/cm² for 1 h in 5 %H₂O-10 %CH₄-N₂ at 1000°C. The spectra are normalized to the intensity of G band at 1580 cm⁻¹ (I_G).
Figure 10. AC impedance spectra (a, b) between the anode and reference electrode for the electrolyte-supported cells and (c, d) between the anode and cathode for the anode-supported cells in various mixtures at 650 and 800°C.
Figure 11. Raman mapping image for the Ni-YSZ in anode-supported cells after discharge for 20 h (a) at 0.1 A/cm² and 650°C in CO₂-CO mixture and (b) at 0.2 A/cm² and 800°C in H₂O-CH₄ mixture. The stronger the peak intensity is, the darker mapping images become.
Figure 12. Time courses of weight ratio of deposited carbon to catalyst with a supply of 10 %Fuel-3 % H₂O-N₂ (Fuel: CH₄, C₃H₈, i-C₄H₁₀ and n-C₄H₁₀) after reduction for 2 h in 10 %H₂-3 % H₂O-N₂ for Ni-GDC at 650°C.
Figure 13. Time courses of weight ratio of deposited carbon to catalystin 11 %n-C₄H₁₀-6 %i-C₄H₁₀-0 %H₂O (dry) or 3 %H₂O (wet)-N₂ after reduction for 1 h with a supply of 57 %H₂-3 % H₂O-N₂ for Ni-YSZ, Ni-ScSZ and Ni-GDC at 600°C.
Figure 14. Time courses of cell voltage at 0.2 A /cm² for anode-supported microtubular cells with Ni-YSZ, Ni-ScSZ and Ni-GDC anodes at 610, 660 and 710°C in 11 %n-C₄H₁₀-6 %i-C₄H₁₀-3 %H₂O-N₂.
Figure 15. Scanning electron microscope images of (a) Ni-YSZ, (b) Ni-ScSZ and (c-e) Ni-GDC anodes after direct butane utilization at (a-c) 610, (d) 660 and (e) 710°C.
Figure 16. Photos of (a) 36 microtubular cells stack with Ni-GDC anode, and (b) a prototype portable SOFC system using a commercially available LPG cartridge.
Figure 17. Current-voltage and power characteristics of a prototype portable SOFC with 36 microtubular cells stack using hydrogen and LPG fuels at 600 and 650°C.
Figure 18. (a) Schematic framework of NEDO project “Technology Development of Portable Electricity Generator Using Micro SOFC” and (b) Schematic appearance of a 200 W-class portable electricity generator using micro SOFCs.

HIGHLY EFFICIENT SOLID OXIDE ELECTROLYZER AND SABATIER SYSTEM

Figure 1. Corning’ s Multi-Strip Cell Electrolyte Supported Fuel Cell
Figure 2 Packet Containing Two Multi-strip cells in Electrolyzer mode
Figure 3. Illustration of SOE/ESR Stack
Figure 4 Bare Electrolyte Substrate
Figure 5 A Close up of the Via Hole in the Substrate
Figure 6 Multi-strip Cell after Anode Printing
Figure 7 Completed Multi-Strip Cell
Figure 8 Dispensing of Glass-Ceramic Frit Paste on the Perimeter of the Substrate
Figure 9 Finished Assembly without the Tubes
Figure 10 Finished Two Chamber Assembly with Inlet and Outlet Tubes
Figure 11 Test Packet Built for Assessing the Seal Integrity
Figure 12 Initial Thermal Cycle Temperature Profile (Cycles 1-3)
Figure 13 Additional Thermal Cycle Temperature Profile (Cycles 4-22)

THE EFFECTS OF EXCESS SILICON AND CARBON IN SiC SOURCE MATERIALS ON SiC SINGLE CRYSTAL GROWTH IN PHYSICAL VAPOUR TRANSPORT METHOD

Figure 1. One of our recent demonstrations of 150 mm-diameter 4H-SiC single crystal wafers (right), exhibited with 100 mm 4H-SiC wafers for comparison (left).
Figure 2. Schematic of a typical growth configuration of PVT method for SiC single crystals. The crucible is heated up to higher temperatures exceeding 2300K with an appropriate temperature gradient along the longitudinal direction of the crucible, giving rise to thermal decomposition of the source powder whereas in the upper part of the crucible the solidification of SiC from the vapour occurs on the seed crystal.
Figure 3. Pressure -dependent phase diagram of Si -C binary system at a fixed temperature of 2500K.
Figure 4. Variation of phase diagram as a function of temperature. The figure shows a part of the pressure-dependent Si-C binary phase diagram shown in Figure 3.
Figure 5. (a) Schematic of elementary reaction processes responsible for SiC single crystal growth, and (b) corresponding equilibrium phase diagrams of source (solid line) and growing crystal (broken line) inside crucible, respectively¹¹; SiC(s) particles in the source are decomposed by sublimation into graphite C(s) and sublimed vapour (v₁) with a composition of v₁(g), and the vapour (v₁) is transported by diffusion to the seed crystal where the temperature is set to be lower than the source’s, followed by the solidification of SiC(s) onto the seed surface with changing the vapour to (v₂) of a composition v₂(g) richer in Si compared to v₁(g)’s.
Figure 6. Graphitization layer formed at the interface between 6H-SiC seed and unintentionally-doped 6H-SiC growing crystal. Fine lines observed in the growing crystal are micropipe defects generated by the interface graphitization layer.
Figure 7. (a) Phase diagram at 2500K for Case A, i.e., SiC(s)+C(s) system in which whole source composition is indicated by vertical broken line, and (b) schematic illustrations of equilibrium states realised in closed cylinder containers under vapour pressures of P_I and P_II, both indicated in Fig.7(a). The thick black parts placed upper in the cylinder containers correspond to mechanically freely-moveable lids. For more details, see the main text.
Figure 8. (a) Si-C phase diagram at 2500K for Case B, i.e., SiC(s)+Si(s) systems with two whole source compositions indicated by the vertical broken line S1 and S2. Equilibrium states realised at different pressures of P_II_I and P_IV, for (b) the composition S1 and (c) composition S2 systems, both indicated in Fig.8(a), respectively. Note that (l) in Figure 8(b) and 8(c) represents a Si-C liquid with a composition of l_III(l). No chemical reactions with cylinder containers are assumed to occur in these systems.

RECENT PROGRESS OF GaN SUBSTRATES MANUFACTURED BY VAS METHOD

Figure 1. Photograph of the se lf-separate d GaN bulk crystal and the base substrate, whose diameters are 116 mm and 125 mm, respectively. On the left is the resulting GaN bulk, and on the right is the base substrate. The graph paper has a 10-mm grid.
Figure 2. Photograph of bulk GaN substrate having a 100-mm diameter.
Figure 3. Cross-sectional schematic of thick growth on a concave substrate.
Figure 4. Normalized growth thickness dependence of the curvature.
Figure 5. Photograph of the heavily Si -doped GaN on a bulk GaN substrate.
Figure 6. Appearance of the as-grown bulk GaN having the highest carrier concentration and lowest resistivity in this study.
Figure 7. Normalized GeCl₄ supply dependence of the carrier concentration and resistivity.
Figure 8. Spectra of the optical-absorption coefficie nt for Ge-doped samples for which carrier concentrations are different.
Figure 9. Carrier concentration dependence of optical-absorption coefficient at 3.0 e V.
Figure 10. Dislocation density of Ge-doped or Si-doped samples as a function of carrier concentration.
Figure 11. C-plane curvature of Ge -doped or Si-doped samples as a function of carrier concentration.
Figure 12. Normalized growth thickness dependence of dislocation density and curvature.

COILABLE SINGLE CRYSTAL FIBERS OF DOPED-YAG FOR HIGH POWER APPLICATIONS

Figure 1. LHPG method
Figure 2. Impact of Diameter Control Feedback System
Figure 3. Line scan of Nd Concentration in Nd:YAG Single-Crystal Fiber (wt % vs. position). (a) distribution of neodymium atoms in a YAG fiber 100 mm long and 550 Δm in diameter, core is 113 Δm (b) distribution of Nd after the third regrowth. The diameter of the Nd-doped core shrunk to about 1/7 of diameter of fiber.
Figure 4: (a) XRD Measurements of Sol-Gel YAG Cladding Indicate Single-Phase Cubic-Face YAG Yb:YAG(b) Fiber 130 Δm in Diameter Cladded with 3 Sol-Gel Coatings of Polycrystalline YAG.
Figure 5. Undoped cladding around a doped core
Figure 6. Nd:YAG Single-Crystal Fiber optical damage experiment

HYDROTHERMAL CRYSTAL GROWTH AND APPLICATIONS

Figure 1 (a). High pressure security valve system and (b) hydrothermal system interfaced with computer at ICMCB-CNRS
Figure 2. Phase diagram of SiO₂-GeO₂.
Figure 3. EPMA of the grown SGO single crystals by hydrothermal method.

REACTIVE ATMOSPHERES FOR OXIDE CRYSTAL GROWTH

Figure 1. Predominance phase diagrams Fe - O₂ with Gibbs free energy (left) or oxygen partial pressure (right) as ordinate, total pressure is 1 bar. p₀₂ at the triple points of the wüstite phase Fe_1-xO (right, inside dashed circles) is from top to bottom: 2.5×10⁻⁶ bar, 7.8×10⁻¹¹ bar, 1×10⁻²⁶ bar
Figure 2. DTA heating curves of FeO. From top to bottom: 1^st run in Ar, 7^th run in Ar, arbitrary run in a reactive atmosphere 85% Ar + 10% CO₂ + 5% CO
Figure 3. Isotherms through the SiO₂-Fe-Fe₂O₃ system below and above the eutectoid wüstite decomposition near 840 K. Labels inside ternary phase fields show p₀₂. At 1400 two binary phase fields “wüstite + fayalite” or “magnetite + high-tridymite” emerge.
Figure 4. Left: The free energy for the formation of Fe₂SiO₄ from constituent oxides (top) is very small, compared to the free formation energy of these constituents from the elements. Right: Predominance phase diagram Fe-Si–O₂ (Fe:Si = 2:1), see also right panel of Figure 1.
Figure 5. Vertical isopleth section through the center of the Gibbs triangles in Figure 3, crossing the fayalite (Fe₂SiO₄) composition. The red dots (right ordinate) represent the equilibrium oxygen partial pressure along the liquidus.
Figure 6. Fugacity of main gaseous species along the liquidus of Fe₂SiO₄. Note that the red (O₂) line corresponds to the dotted red line in Figure 5.
Figure 7. Top: DTA/TG measurements (heating/ cooling with ±10 K/min) of V₂O₅/MoO₃ mixtures with 14.2 mol% MoO₃ in air or in 5N Ar, respectively. Bottom: Phase fields of vanadium-molybdenum-oxides with V:Mo in slight excess of the ideal 9:6 ratio for V₉Mo₆O₄₀. The liquid phase of molten V-Mo-oxides is calculated as ideal mixture. The dashed lines represent the p₀₂ of air or of the residual gas impurities in Ar with 99.999% purity, respectively (Reprinted with permission from Cambridge University Press¹⁸.)

DISCUSSION ON POLYCRYSTALS OVER SINGLE CRYSTALS FOR OPTICAL DEVICES

Figure 1. Transparent PCA ceramics obtained with different sintering parameters (The encircled are the samples with best transparencies)
Figure 2. SEM micrographs of YLO ceramics (a) 1500°C, 100 MPa, t₈= 5 min and Rh=50°C/ min, annealed at 1200°C for 12 h (b) 1700°C, 100 MPa, ts= 5 min and Rh=50°C/ min, annealed at 1200°C for 12 h

TERAHERTZ TIME-DOMAIN SPECTROSCOPY APPLICATION TO NON-DESTRUCTIVE QUALITY EVALUATION OF INDUSTRIAL CRYSTALLINE MATERIALS

Figure 1. Output of the THz-TDS spectrometry compared with that of the FTIR spectrometry^2,³^{, 4)}. In this FTIR spectroscopy, the light source is continuous white light and its power intensity is detected as an interferograms, which does not exhibit an intrinsic phase shift. The light source in the THz-TDS spectrometry is a coherent femtosecond pulsed source in which the detected time-domain signals have intrinsic phase shifts. The THz-TDS spectrometry makes output not only the spectral intensity of THz radiation but also the intrinsic phase shift Δφ(ω) of THz light transmission. The ability to obtain the output with intrinsic phase shift is the most important advantage for spectroscopic applications.
Figure 2. Schematic illustration of the THz-TDS optics (a) and photographic view of the air evacuated optical bench unit (b) of the newly developed versatile THz-TDS instrument (Aispec model : pulse IRS 2000/2000p)
Figure 3. Wavenumber Calibration on the THz-TD Spectrum measurements.The water vapour in the air of 60 Pa absorption lines (a) and the spectral resolution (b).
Figure 4. Spectrometric fundamental propertis performed on the newly developed versatile the THz-TDS instrument (Aispec model: pulse IRS -2000). The spectrum wavenumber coverage and spectrometric dynamic range of THz source radiation (a), the noise level and stability on 100% line (b) and the √N gain on random noise (c).
Figure 5. Advanced optics of the composite THz-TDS combined with a high throughput Michelson (Martin- Puplett configuration) interferometer (FTIR) (upper) and expansion of the spectrum wavenumber coverage to the NIR region (lower).
Figure 6. Far-Infrared phonon-polariton dispersion probed for the ferro-electric bismuth titanate Bi4Ti3O₁2 (BIT) crystal by THz-TDS. The transmission T(σ) and the intrinsic phase shift Δφ(σ) measured on the c-plate of high-quality BIT crystal (a), and the complex dielectric constants ε*(c){ε’(σ), ε”(σ)} estimated through T(σ) and Δφ(σ) of measured transmission spectra in the light polarization along the a-axis (b) are shown. In (b), the solid lines are the calculated curves using the constants of ω_TO=28.3[cm⁻¹] and σ=3.0[cm⁻¹] obtained through Raman scattering measurements. It can be found that the estimated values of ε*(σ) through THz-TDS transmission measurements are quite in agreement with the calculated values. The dispersion relations of phonon-polariton are also shown (c), in which the closed circles denote the estimated values through Δφ(σ) and the solid lines denote the calculated curves of phonon-polariton dispersion relation on the basis of the Kurosawa formula, and the table in (c) shows the values of fitting parameters for observed polariton.
Figure 7. Complex dielectric constants measured on lithiumu heptagermanate Li₂Ge₇O₁₅ (LGO) crystal for the light polarization parallel to the c-axi s (Left and Center) and Dispersion relation measured on lithiumu heptagermanate Li₂Ge₇O₁₅ (LGO) crystal for the light polarization parallel to the c-axis (Right). Solid curves denote the calculated curves on the bases of the Kurosawa formula. Closed circles denote the measured dispersion relation for the light polarization parallel to the c-axis, and the values of fitting parameters are tabled.
Figure 8. Transmission intensity and phase shift spectra measured on an x- plate of a poled litium niobate LiNbO₃ (LN) for the light polarization parallel to the y-axis (E//y) and the z-axis (E//z) (Upper), Complex dielectric constants measured on an x-plate of a poled LiNbO₃ (LN) crystal for the light polarization parallel to the y-axis and the z-axis (Middle), and Dispersion relations measured on an x-plate of a poled LiNbO₃ (LN) crystal for the light polarization parallel to the z-axis (Lower). Solid curves denote the calculated curves on the bases of the Kurosawa formula. The values of fitting parameters are tabled.
Figure 9. THz-TDS spectral fingerprints obtained by the non-destructive me asure ments on the marketed OTC tablets of different kinds of cold medicines and stomach medicine named G10/GD/G10P.
Figure 10. Polymorphs Identification of Pharmaceutical Active component Famotidine The transmission spectra measured on the polymorphs of form A, form B and other forms included in the medicinal main active component famotidine included in the OTC tablets named G1 0, GD and G1 0 P, and additionally the main additives of lactose and mannite. The THz -TDS absorption fingerprint spectra specific to each polymorphs component allow to distinguish each other clearly and identify each polymorphs component content ratio in cluded in the medicinal main active component of the OTC pharmaceutical tablet products.
Figure 11. Photographic view of a precursory THz-TDS instrument for applications in Process Analytical Technologies (PAT), and with the potential to be extended to at-line and on-line quality control inspection in pharmaceutical product line.

Preface

The 12th International Symposium on Solid Oxide Fuel Cells (SOFC): Materials, Science, and Technology and a Focused Session: Single Crystalline Materials for Electrical, Optical and Medical Applications were held during the 39th International Conference and Exposition on Advanced Ceramics and Composites in Daytona Beach, FL, January 25-30, 2015. These symposia provided an international forum for scientists, engineers, and technologists to discuss and exchange state-of-the-art ideas, information, and technology on various aspects of solid oxide fuel cells and single crystal materials for electronic applications. This CESP issue contains 18 papers submitted by authors of these two symposia for inclusion in the meeting proceedings.

The editors wish to extend their gratitude and appreciation to all the authors for their contributions and cooperation, to all the participants and session chairs for their time and efforts, and to all the reviewers for their useful comments and suggestions. Financial support from The American Ceramic Society is gratefully acknowledged. Thanks are due to the staff of the meetings and publications departments of The American Ceramic Society for their invaluable assistance.

Advice, help and cooperation of the following members of the international organizing committee at various stages were instrumental in making this symposium and focused session a great success.

12 International Symposium on SOCFs: Vincenzo Esposito, Tatsumi Ishihara, Ruey-Yi Lee, Nguyen Minh, Mogens Mogensen, Prabhakar Singh, Federico Smeacetto, Jeffry Stevenson, Toshio Suzuki, and Sascha Kuhn
Single Crystalline Materials: Noboru Ichinose, Robert Feigelson, Richard Moncorgé, Reinhard Uecker, Alain Largeteau, Mauro Tonelli

We hope that this volume will serve as a valuable reference for the engineers, scientists, researchers and others interested in the materials, science and technology of solid oxide fuel cells and single crystal materials.

NAROTTAM P. BANSAL
NASA Glenn Research Center, USA

MIHAILS KUSNEZOFF
Fraunhofer IKTS, GERMANY

KIYOSHI SHIMAMURA
National Institute for Materials Science, JAPAN

Advances in Solid Oxide
Fuel Cells and
Electronic Ceramics

A Collection of Papers Presented at the
39th International Conference on
Advanced Ceramics and Composites
January 25-30, 2015
Daytona Beach, Florida

Preface

A Collection of Papers Presented at the 39th International Conference on Advanced Ceramics and Composites January 25-30, 2015 Daytona Beach, Florida

A Collection of Papers Presented at the
39th International Conference on
Advanced Ceramics and Composites
January 25-30, 2015
Daytona Beach, Florida